Low-power high-mobility organic single-crystal field-effect transistor

Evolving flexible electronics requires the development of high-mobility and low-power organic field-effect transistors (OFETs) that are crucial for emerging displays, sensors, label technologies. Among diverse materials, polymer gate dielectrics two-dimensional (2D) crystals have intrinsic flexibility natural compatibility with each other OFETs high performance; however, their combination lacks non-impurity non-damage construction strategies. In this study, we developed a desirable OFET system using damage-free transfer 2D single crystal, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene on unique dielectric layer, poly(amic acid) (PAA). Benefiting from PAA surface nanostructure long-range ordered characteristics resulting show remarkable performance mobility low operating voltage 18.7 cm2 V−1 s−1 −3 V, respectively. The result indicates combining crystal high-quality method can produce electronic devices performance.